output conductance meaning in Chinese

输出电导

Hfets ( doped channel ) : concept ; i - v model including velocity saturation ; gate 2 characteristics ; output conductance ; applications of strained layers
基本概念，电流-电压模型，其中包括速度饱和，闸极特性，输出电导，应变层的应用。
Considering the unsymmetrical distribution of interface states induced by hot - carrier effects along the channel , the quasi - two - dimensional analysis methods are used to deduced the drain current , threshold voltage and electrical field in channel after hot - carrier degradation and the theoretical results are fully verified with the experimental data and m1ntmos6 . 0 simulation output . the degradations of device output conductance , subthreshold conduction and rf characteristics are also analyzed
针对mos器件热载流子退化所引入的界面态，根据其沿沟道非均匀分布的模型，采用准二维分析方法对退化后器件的漏源电流、阈值电压和饱和区沟道电场作了详细的理论推导，并与实验结果和器件二维数值模拟软件minimos6 . 0的计算结果进行了验证比较。